MOSFET - POWER,NCHANNEL, SUPERFE NTBL050N65S3H
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Description:
MOSFET - POWER,NCHANNEL, SUPERFE
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
NTBL050N65S3H(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory77523,Price reference "real-time change" China/Hongkong。 NTBL050N65S3H package/specs, Download NTBL050N65S3H、Datasheet。