SIC MOS TO247-4L 22MOHM 1200V NVH4L022N120M3S
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Description:
SIC MOS TO247-4L 22MOHM 1200V
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
NVH4L022N120M3S(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory75021,Price reference "real-time change" China/Hongkong。 NVH4L022N120M3S package/specs, Download NVH4L022N120M3S、Datasheet。