TRENCH 6 30V NCH NTMFS4C808NAT3G
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Description:
TRENCH 6 30V NCH
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
NTMFS4C808NAT3G(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory72989,Price reference "real-time change" China/Hongkong。 NTMFS4C808NAT3G package/specs, Download NTMFS4C808NAT3G、Datasheet。