MOSFET N-CH 600V IPAK FCU360N65S3R0
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Description:
MOSFET N-CH 600V IPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FCU360N65S3R0(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory16573,Price reference "real-time change" China/Hongkong。 FCU360N65S3R0 package/specs, Download FCU360N65S3R0、Datasheet。