MOSFET N-CH 200V 9A TO252 FQD12N20LTM-F085P
The pictures are for reference only
Description:
MOSFET N-CH 200V 9A TO252
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
Not applicable to new design
DataSheet
FQD12N20LTM-F085P(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory62434,Price reference "real-time change" China/Hongkong。 FQD12N20LTM-F085P package/specs, Download FQD12N20LTM-F085P、Datasheet。