MOSFET N-CH 650V 12A TO220-3 FCP260N65S3
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Description:
MOSFET N-CH 650V 12A TO220-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FCP260N65S3(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory31933,Price reference "real-time change" China/Hongkong。 FCP260N65S3 package/specs, Download FCP260N65S3、Datasheet。