MOSFET N-CH 800V 5.8A D2PAK FQB6N80TM
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Description:
MOSFET N-CH 800V 5.8A D2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FQB6N80TM(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory51181,Price reference "real-time change" China/Hongkong。 FQB6N80TM package/specs, Download FQB6N80TM、Datasheet。