MOSFET N-CH 800V 3.3A TO220F FQPF6N80T
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Description:
MOSFET N-CH 800V 3.3A TO220F
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FQPF6N80T(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory4147,Price reference "real-time change" China/Hongkong。 FQPF6N80T package/specs, Download FQPF6N80T、Datasheet。