MOSFET N-CH 600V 23A TO220 FCP165N60E
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Description:
MOSFET N-CH 600V 23A TO220
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FCP165N60E(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory45029,Price reference "real-time change" China/Hongkong。 FCP165N60E package/specs, Download FCP165N60E、Datasheet。