NTMFSC2D9N08H parameter specification DataSheet and ECAD Model -ICQQG

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The pictures are for reference only

Brand:

Model:

NTMFSC2D9N08H

Description:

T8 80V DFN8 5X6 DUAL COOL

Stock:

99478

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Offer

Tel ：0755-82988826

Phone：13794459602(Wechat)

Q Q：3469113929

Email：3469113929@qq.com

Parameters

Current at 25 ° C - continuous drain (Id)

23A(Ta),154A(Tc)

Drain source voltage (Vdss)

80 V

Drive voltage (maximum RdsOn, minimum RdsOn)

6V,10V

FET Type

N channels

FET function

Gate charge (Qg) at different Vgs (maximum)

68 nC @ 10 V

Input capacitance at different Vds (Ciss) (maximum)

4380 pF @ 40 V

On resistance (maximum) for different Ids and Vgs

2.9 mΩ @ 50A,10V

Power dissipation (maximum)

3.8W(Ta),166W(Tc)

Vgs (max)

±20V

Vgs (th) (maximum) for different Ids

4V @ 250µA

packing

series

technology

MOSFET(Metal oxide)

working temperature

-55°C ~ 175°C(TJ)

Encapsulation/Housing

8-DFN(5x6.15)

Country of origin

USA

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

On sale

DataSheet

下载NTMFSC2D9N08H.pdf

NTMFSC2D9N08H（MOSFET）ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory99478,Price reference "real-time change" China/Hongkong。 NTMFSC2D9N08H package/specs, Download NTMFSC2D9N08H、Datasheet。