PTNG 100V LOW Q3.2MOHM N-FET, HE NTMFS3D2N10MDT1G
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Description:
PTNG 100V LOW Q3.2MOHM N-FET, HE
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
NTMFS3D2N10MDT1G(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory52755,Price reference "real-time change" China/Hongkong。 NTMFS3D2N10MDT1G package/specs, Download NTMFS3D2N10MDT1G、Datasheet。