MOSFET N-CH 60V 29A/155A DPAK NVD5C632NLT4G
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Description:
MOSFET N-CH 60V 29A/155A DPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
NVD5C632NLT4G(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory99149,Price reference "real-time change" China/Hongkong。 NVD5C632NLT4G package/specs, Download NVD5C632NLT4G、Datasheet。