MOSFET N-CH 900V 8A TO3PN FQA8N90C-F109
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Description:
MOSFET N-CH 900V 8A TO3PN
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FQA8N90C-F109(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory1825,Price reference "real-time change" China/Hongkong。 FQA8N90C-F109 package/specs, Download FQA8N90C-F109、Datasheet。