40V T10M IN S08FL GEN 2 PACKAGE NVMFWS0D5N04XMT1G
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Description:
40V T10M IN S08FL GEN 2 PACKAGE
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
NVMFWS0D5N04XMT1G(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory86565,Price reference "real-time change" China/Hongkong。 NVMFWS0D5N04XMT1G package/specs, Download NVMFWS0D5N04XMT1G、Datasheet。