MOSFET N-CH 650V 30A D2PAK-3 FCB099N65S3
The pictures are for reference only
Description:
MOSFET N-CH 650V 30A D2PAK-3
Contact Us
Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FCB099N65S3(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory5504,Price reference "real-time change" China/Hongkong。 FCB099N65S3 package/specs, Download FCB099N65S3、Datasheet。