MOSFET N-CH 900V 9A TO3P FQA9N90C-F109
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Description:
MOSFET N-CH 900V 9A TO3P
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FQA9N90C-F109(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory6871,Price reference "real-time change" China/Hongkong。 FQA9N90C-F109 package/specs, Download FQA9N90C-F109、Datasheet。