MOSFET N-CH 650V 20.6A TO247 FCH190N65F-F155
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Description:
MOSFET N-CH 650V 20.6A TO247
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FCH190N65F-F155(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory28160,Price reference "real-time change" China/Hongkong。 FCH190N65F-F155 package/specs, Download FCH190N65F-F155、Datasheet。