NVMFS4C01NWFT3G parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Model:

NVMFS4C01NWFT3G

Description:

MOSFET N-CH 30V 49A/319A 5DFN

Stock:

23976

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Offer

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Parameters

Current at 25 ° C - continuous drain (Id)

49A(Ta),319A(Tc)

Drain source voltage (Vdss)

30 V

Drive voltage (maximum RdsOn, minimum RdsOn)

4.5V,10V

FET Type

N channels

FET function

Gate charge (Qg) at different Vgs (maximum)

139 nC @ 10 V

Input capacitance at different Vds (Ciss) (maximum)

10144 pF @ 15 V

On resistance (maximum) for different Ids and Vgs

0.9 mΩ @ 30A,10V

Power dissipation (maximum)

3.84W(Ta),161W(Tc)

Vgs (max)

±20V

Vgs (th) (maximum) for different Ids

2.2V @ 250µA

packing

series

Automotive, AEC-Q101

technology

MOSFET(Metal oxide)

working temperature

-55°C ~ 175°C(TJ)

Encapsulation/Housing

5-DFN(5x6)(8-SOFL)

Country of origin

USA

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

Not applicable to new design

DataSheet

下载NVMFS4C01NWFT3G.pdf

NVMFS4C01NWFT3G（MOSFET）ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory23976,Price reference "real-time change" China/Hongkong。 NVMFS4C01NWFT3G package/specs, Download NVMFS4C01NWFT3G、Datasheet。