WIDE SOA NTMJS1D15N03CGTWG
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
NTMJS1D15N03CGTWG(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory96669,Price reference "real-time change" China/Hongkong。 NTMJS1D15N03CGTWG package/specs, Download NTMJS1D15N03CGTWG、Datasheet。