WIDE SOA NTMFS0D55N03CGT1G
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
NTMFS0D55N03CGT1G(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory39255,Price reference "real-time change" China/Hongkong。 NTMFS0D55N03CGT1G package/specs, Download NTMFS0D55N03CGT1G、Datasheet。