MOSFET N-CH 600V 25A I2PAK FCI25N60N-F102
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Description:
MOSFET N-CH 600V 25A I2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FCI25N60N-F102(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory56905,Price reference "real-time change" China/Hongkong。 FCI25N60N-F102 package/specs, Download FCI25N60N-F102、Datasheet。