SIC MOS TO247-4L 650V NVH4L075N065SC1
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Description:
SIC MOS TO247-4L 650V
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
SiC(Silicon carbide bonded crystal tube)
DataSheet
NVH4L075N065SC1(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory84236,Price reference "real-time change" China/Hongkong。 NVH4L075N065SC1 package/specs, Download NVH4L075N065SC1、Datasheet。