SIC MOSFET 900V TO247-4L NVH4L020N090SC1
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Description:
SIC MOSFET 900V TO247-4L
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
NVH4L020N090SC1(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory55887,Price reference "real-time change" China/Hongkong。 NVH4L020N090SC1 package/specs, Download NVH4L020N090SC1、Datasheet。