MOSFET P-CH 20V 850MA SUPERSOT3 NDS352P
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Description:
MOSFET P-CH 20V 850MA SUPERSOT3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
NDS352P(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory28578,Price reference "real-time change" China/Hongkong。 NDS352P package/specs, Download NDS352P、Datasheet。