MOSFET N-CH 30V 10A 8SOIC NDS8410
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Description:
MOSFET N-CH 30V 10A 8SOIC
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
NDS8410(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory35538,Price reference "real-time change" China/Hongkong。 NDS8410 package/specs, Download NDS8410、Datasheet。