MOSFET N-CH 1000V 4.3A TO220-3 RFP4N100
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Description:
MOSFET N-CH 1000V 4.3A TO220-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
RFP4N100(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory81595,Price reference "real-time change" China/Hongkong。 RFP4N100 package/specs, Download RFP4N100、Datasheet。