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    Home/    Category/    MOSFET/    NTD80N02T4

    MOSFET N-CH 24V 80A DPAK NTD80N02T4

    NTD80N02T4 image
    The pictures are for reference only
    Brand:
    ON
    Model:
    NTD80N02T4
    Description:
    MOSFET N-CH 24V 80A DPAK
    Stock:
    11308
    Type:
    goods in stock
    Store:
    Shenzhen/Hong kong
    DataSheet:
    ECAD Model:
    Offer
    Contact UsContact Us
    座机icoTel ：0755-82988826
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    产品参数icoParameters
  • Current at 25 ° C - continuous drain (Id)
    80A(Tc)
  • Drain source voltage (Vdss)
    24 V
  • Drive voltage (maximum RdsOn, minimum RdsOn)
    4.5V,10V
  • FET Type
    N channels
  • FET function
    -
  • Gate charge (Qg) at different Vgs (maximum)
    42 nC @ 4.5 V
  • Input capacitance at different Vds (Ciss) (maximum)
    2600 pF @ 20 V
  • On resistance (maximum) for different Ids and Vgs
    5.8 mΩ @ 80A,10V
  • Power dissipation (maximum)
    75W(Tc)
  • Vgs (max)
    ±20V
  • Vgs (th) (maximum) for different Ids
    3V @ 250µA
  • packing
    TR,CT,bulk
  • series
    -
  • technology
    MOSFET(Metal oxide)
  • working temperature
    -55°C ~ 150°C(TJ)
  • Encapsulation/Housing
    DPAK
  • Country of origin
    USA
  • Warehouse
    China/Hong Kong
  • quality
    Original genuine
  • Installation type
    Surface mount
  • Part status
    stop production
    • PDFicoDataSheet
    NTD80N02T4（MOSFET）ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory11308,Price reference "real-time change" China/Hongkong。 NTD80N02T4 package/specs, Download NTD80N02T4、Datasheet。
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