MOSFET P-CH 8V 5.4A CHIPFET NTHS2101PT1
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Description:
MOSFET P-CH 8V 5.4A CHIPFET
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
NTHS2101PT1(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory2781,Price reference "real-time change" China/Hongkong。 NTHS2101PT1 package/specs, Download NTHS2101PT1、Datasheet。