MOSFET P-CH 12V 3.4A 8SOIC NTMS4P01R2
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Description:
MOSFET P-CH 12V 3.4A 8SOIC
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
NTMS4P01R2(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory48277,Price reference "real-time change" China/Hongkong。 NTMS4P01R2 package/specs, Download NTMS4P01R2、Datasheet。