MOSFET N-CH 20V 2.9A CHIPFET NTHD4N02FT1
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Description:
MOSFET N-CH 20V 2.9A CHIPFET
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Schottky diode (isolated)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
NTHD4N02FT1(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory6590,Price reference "real-time change" China/Hongkong。 NTHD4N02FT1 package/specs, Download NTHD4N02FT1、Datasheet。