MOSFET P-CH 30V 3.3A CHIPFET NTHS4111PT1G
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Description:
MOSFET P-CH 30V 3.3A CHIPFET
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
NTHS4111PT1G(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory67657,Price reference "real-time change" China/Hongkong。 NTHS4111PT1G package/specs, Download NTHS4111PT1G、Datasheet。