MOSFET P-CH 20V 3.3A SOT-363 NTJS4151PT1
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Description:
MOSFET P-CH 20V 3.3A SOT-363
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
NTJS4151PT1(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory71331,Price reference "real-time change" China/Hongkong。 NTJS4151PT1 package/specs, Download NTJS4151PT1、Datasheet。