MOSFET N-CH 60V 18A DPAK NTD18N06T4G
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Description:
MOSFET N-CH 60V 18A DPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
NTD18N06T4G(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory50367,Price reference "real-time change" China/Hongkong。 NTD18N06T4G package/specs, Download NTD18N06T4G、Datasheet。