MOSFET P-CH 20V 1.2A SUPERSOT3 NDS336P
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Description:
MOSFET P-CH 20V 1.2A SUPERSOT3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
NDS336P(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory95847,Price reference "real-time change" China/Hongkong。 NDS336P package/specs, Download NDS336P、Datasheet。