MOSFET N-CH 100V 9A/61A I2PAK FDI3652
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Description:
MOSFET N-CH 100V 9A/61A I2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FDI3652(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory10288,Price reference "real-time change" China/Hongkong。 FDI3652 package/specs, Download FDI3652、Datasheet。