MOSFET N-CH 30V 13A/50A DPAK FDD6696
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Description:
MOSFET N-CH 30V 13A/50A DPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FDD6696(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory22826,Price reference "real-time change" China/Hongkong。 FDD6696 package/specs, Download FDD6696、Datasheet。