MOSFET P-CH 30V 6.3A 8SOIC FDS6609A
The pictures are for reference only
Description:
MOSFET P-CH 30V 6.3A 8SOIC
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FDS6609A(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory86528,Price reference "real-time change" China/Hongkong。 FDS6609A package/specs, Download FDS6609A、Datasheet。