MOSFET N-CH 100V 600MA SC88 FDG361N
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Description:
MOSFET N-CH 100V 600MA SC88
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FDG361N(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory92289,Price reference "real-time change" China/Hongkong。 FDG361N package/specs, Download FDG361N、Datasheet。