MOSFET N-CH 30V 16A 8SOIC FDS6688
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Description:
MOSFET N-CH 30V 16A 8SOIC
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FDS6688(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory18048,Price reference "real-time change" China/Hongkong。 FDS6688 package/specs, Download FDS6688、Datasheet。