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MOSFET N-CH 30V 88A D-PAK FDD6688S

FDD6688S image
The pictures are for reference only
Brand:
Model:
FDD6688S
Description:
MOSFET N-CH 30V 88A D-PAK
Stock:
17551
Type:
goods in stock
Store:
Shenzhen/Hong kong
DataSheet:
ECAD Model:
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产品参数icoParameters
  • Current at 25 ° C - continuous drain (Id)
    88A(Ta)
  • Drain source voltage (Vdss)
    30 V
  • Drive voltage (maximum RdsOn, minimum RdsOn)
    4.5V,10V
  • FET Type
    N channels
  • FET function
    -
  • Gate charge (Qg) at different Vgs (maximum)
    81 nC @ 10 V
  • Input capacitance at different Vds (Ciss) (maximum)
    3290 pF @ 15 V
  • On resistance (maximum) for different Ids and Vgs
    5.1 mΩ @ 18.5A,10V
  • Power dissipation (maximum)
    69W(Ta)
  • Vgs (max)
    ±20V
  • Vgs (th) (maximum) for different Ids
    3V @ 1mA
  • packing
    TR
  • series
    PowerTrench®
  • technology
    MOSFET(Metal oxide)
  • working temperature
    -55°C ~ 150°C(TJ)
  • Encapsulation/Housing
    TO-252AA
  • Country of origin
    USA
  • Warehouse
    China/Hong Kong
  • quality
    Original genuine
  • Installation type
    Surface mount
  • Part status
    stop production
  • PDFicoDataSheet
    FDD6688S(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory17551,Price reference "real-time change" China/Hongkong。 FDD6688S package/specs, Download FDD6688S、Datasheet。
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