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    K4A4G165WF-BCTD SSDPEKNU512GZ MT40A512M16LY-075:E
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    Home/    Category/    MOSFET/    FDS7779Z

    MOSFET P-CH 30V 16A 8SOIC FDS7779Z

    FDS7779Z image
    The pictures are for reference only
    Brand:
    ON
    Model:
    FDS7779Z
    Description:
    MOSFET P-CH 30V 16A 8SOIC
    Stock:
    39908
    Type:
    goods in stock
    Store:
    Shenzhen/Hong kong
    DataSheet:
    ECAD Model:
    Offer
    Contact UsContact Us
    座机icoTel ：0755-82988826
    手机icoPhone：+86 19166251823(Wechat)
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    产品参数icoParameters
  • Current at 25 ° C - continuous drain (Id)
    16A(Ta)
  • Drain source voltage (Vdss)
    30 V
  • Drive voltage (maximum RdsOn, minimum RdsOn)
    4.5V,10V
  • FET Type
    P channels
  • FET function
    -
  • Gate charge (Qg) at different Vgs (maximum)
    98 nC @ 10 V
  • Input capacitance at different Vds (Ciss) (maximum)
    3800 pF @ 15 V
  • On resistance (maximum) for different Ids and Vgs
    7.2 mΩ @ 16A,10V
  • Power dissipation (maximum)
    2.5W(Ta)
  • Vgs (max)
    ±25V
  • Vgs (th) (maximum) for different Ids
    3V @ 250µA
  • packing
    TR
  • series
    PowerTrench®
  • technology
    MOSFET(Metal oxide)
  • working temperature
    -55°C ~ 150°C(TJ)
  • Encapsulation/Housing
    8-SOIC
  • Country of origin
    USA
  • Warehouse
    China/Hong Kong
  • quality
    Original genuine
  • Installation type
    Surface mount
  • Part status
    stop production
    • PDFicoDataSheet
    FDS7779Z（MOSFET）ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory39908,Price reference "real-time change" China/Hongkong。 FDS7779Z package/specs, Download FDS7779Z、Datasheet。
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