MOSFET N-CH 200V 850MA SOT223-4 FQT4N20TF
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Description:
MOSFET N-CH 200V 850MA SOT223-4
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FQT4N20TF(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory13994,Price reference "real-time change" China/Hongkong。 FQT4N20TF package/specs, Download FQT4N20TF、Datasheet。