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    K4A4G165WF-BCTD SSDPEKNU512GZ MT40A512M16LY-075:E
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    Home/    Category/    MOSFET/    SSN1N45BBU

    MOSFET N-CH 450V 500MA TO92-3 SSN1N45BBU

    SSN1N45BBU image
    The pictures are for reference only
    Brand:
    ON
    Model:
    SSN1N45BBU
    Description:
    MOSFET N-CH 450V 500MA TO92-3
    Stock:
    61914
    Type:
    goods in stock
    Store:
    Shenzhen/Hong kong
    DataSheet:
    ECAD Model:
    Offer
    Contact UsContact Us
    座机icoTel ：0755-82988826
    手机icoPhone：+86 19166251823(Wechat)
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    产品参数icoParameters
  • Current at 25 ° C - continuous drain (Id)
    500mA(Tc)
  • Drain source voltage (Vdss)
    450 V
  • Drive voltage (maximum RdsOn, minimum RdsOn)
    10V
  • FET Type
    N channels
  • FET function
    -
  • Gate charge (Qg) at different Vgs (maximum)
    8.5 nC @ 10 V
  • Input capacitance at different Vds (Ciss) (maximum)
    240 pF @ 25 V
  • On resistance (maximum) for different Ids and Vgs
    4.25 Ω @ 250mA,10V
  • Power dissipation (maximum)
    900mW(Ta)
  • Vgs (max)
    ±50V
  • Vgs (th) (maximum) for different Ids
    3.7V @ 250µA
  • packing
    bulk
  • series
    -
  • technology
    MOSFET(Metal oxide)
  • working temperature
    -55°C ~ 150°C(TJ)
  • Encapsulation/Housing
    TO-92-3
  • Country of origin
    USA
  • Warehouse
    China/Hong Kong
  • quality
    Original genuine
  • Installation type
    Through-Hole
  • Part status
    stop production
    • PDFicoDataSheet
    SSN1N45BBU（MOSFET）ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory61914,Price reference "real-time change" China/Hongkong。 SSN1N45BBU package/specs, Download SSN1N45BBU、Datasheet。
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    ICQQG images/产品内页BANNER英文.jpg
    ICQQG images/c2fc46c3cfa96cda43d701b26ccc08fe.jpg
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