MOSFET N-CH 250V 3A IPAK FQU4N25TU
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Description:
MOSFET N-CH 250V 3A IPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FQU4N25TU(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory93908,Price reference "real-time change" China/Hongkong。 FQU4N25TU package/specs, Download FQU4N25TU、Datasheet。