MOSFET N-CH 80V 9.3A TO220-3 FQP9N08
The pictures are for reference only
Description:
MOSFET N-CH 80V 9.3A TO220-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FQP9N08(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory27439,Price reference "real-time change" China/Hongkong。 FQP9N08 package/specs, Download FQP9N08、Datasheet。