MOSFET N-CH 500V 1.1A DPAK FQD1N50TF
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Description:
MOSFET N-CH 500V 1.1A DPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FQD1N50TF(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory16135,Price reference "real-time change" China/Hongkong。 FQD1N50TF package/specs, Download FQD1N50TF、Datasheet。