MOSFET N-CH 500V 1.1A DPAK FQD1N50TM
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Description:
MOSFET N-CH 500V 1.1A DPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FQD1N50TM(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory42608,Price reference "real-time change" China/Hongkong。 FQD1N50TM package/specs, Download FQD1N50TM、Datasheet。