MOSFET N-CH 200V 3A DPAK FQD4N20TF
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Description:
MOSFET N-CH 200V 3A DPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FQD4N20TF(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory5480,Price reference "real-time change" China/Hongkong。 FQD4N20TF package/specs, Download FQD4N20TF、Datasheet。