MOSFET P-CH 100V 3.6A DPAK FQD5P10TF
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Description:
MOSFET P-CH 100V 3.6A DPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FQD5P10TF(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory87501,Price reference "real-time change" China/Hongkong。 FQD5P10TF package/specs, Download FQD5P10TF、Datasheet。