MOSFET N-CH 100V 10A DPAK FQD13N10TF
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Description:
MOSFET N-CH 100V 10A DPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FQD13N10TF(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory61636,Price reference "real-time change" China/Hongkong。 FQD13N10TF package/specs, Download FQD13N10TF、Datasheet。